Features: LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTIONApplication HIGH FREQUENCY INVERTERS SMPS and...
STGB14NC60KD: Features: LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE NEW ...
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Symbol | Parameter | Value | Unit | |
STGB14NC60KD STGP14NC60KD |
STGF14NC60KD | |||
VCES | Collector-Emitter Voltage (VGS = 0) | 600 | V | |
VECR | Emitter-Collector Voltage | 20 | V | |
VGE | Gate-Emitter Voltage | ±20 | V | |
IC | Collector Current (continuous) at TC = 25°(#) | 25 | 11 | A |
IC | Collector Current (continuous) at TC = 100 (#) | 14 | 7 | A |
ICM ( *) | Collector Current (pulsed) | 50 | A | |
IF | Diode RMS Forward Current at TC = 25 | 20 | A | |
PTOT | Total Dissipation at TC = 25 | 80 | 25 | W |
Derating Factor | 0.64 | 0.20 | W/ | |
VISO | Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25) | -- | 2500 | V |
Tstg | Storage Temperature | 55 to 150 | ||
Tj | Operating Junction Temperature |
Using the latest high voltage technology based on a patented strip layout, STGB14NC60KD STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH(TM) IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short cir-cuit withstand capability.