STGB14NC60KDT4, US $ .71-1.16 , STMicroelectronics, STGB14NC60KDT4 DataSheet download, circuit diagram from SeekIC.com

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STGB14NC60KDT4: IGBT Transistors PowerMESH" IGBT

STGB14NC60KDT4 Data Sheet

US $ .71~1.16 / Piece | Get Latest Price

Part Number:: STGB14NC60KDT4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2025/12/6

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Recent History
What is this?

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	150 V	Maximum Gate Emitter Voltage :	+/- 20 V
Gate-Emitter Leakage Current :	2 A	Maximum Operating Temperature :	+ 150 C
Package / Case :	D2PAK-3	Packaging :	Reel

Description

Continuous Collector Current at 25 C :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : D2PAK-3
Collector-Emitter Saturation Voltage : 150 V
Gate-Emitter Leakage Current : 2 A

Parameters:

Technical/Catalog Information	STGB14NC60KDT4
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	25A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Power - Max	80W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Packaging	Cut Tape (CT)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGB14NC60KDT4 STGB14NC60KDT4 497 5109 1 ND 49751091ND 497-5109-1

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STGB14NC60KDT4

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