STGP3NB60K

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V
Continuous Collector Current at 25 C : 10 A
Power Dissipation : 50 W


Features:

· HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
· LOW ON-VOLTAGE DROP (V_cesat)
· LOW GATE CHARGE
· HIGH CURRENT CAPABILITY
· OFF LOSSES INCLUDE TAIL CURRENT
· HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED


Application

· HIGH FREQUENCY MOTOR CONTROLS
· SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value			Unit
		TO-220 D2PAK	TO-220FP	DPAK
VCES	Collector-Emitter Voltage (VGS = 0)	600			V
VECR	Emitter-Collector Voltage	20			V
VGE	Gate-Emitter Voltage	±20			V
IC	Collector Current (continuos) at TC = 25	6	6	6	A
IC	Collector Current (continuos) at TC = 100	3	3	3	A
ICM ()	Collector Current (pulsed)	24	24	24	A
If (1)	Forward Current	3			A
Ifm (1)	Forward Current Pulsed	24			A
PTOT	Total Dissipation at TC = 25	68	25	60	W
	Derating Factor	0.75			W/
VISO	Insulation Withstand Voltage A.C.	--	2500	--	V
Tstg	Storage Temperature	55 to 150 150
Tj	Max. Operating Junction Temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGP3NB60K STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.