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STGP7NB120SD

IGBT Transistors N-Ch 1200 Volt 7 Amp

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SeekIC No. : 00144024 Detail

STGP7NB120SD: IGBT Transistors N-Ch 1200 Volt 7 Amp

STGP7NB120SD Data Sheet

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Part Number:
STGP7NB120SD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220-3


Application

 MOTOR CONTROL
 LIGHT DIMMER
 INTRUSH CURRENT LIMITATION


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Collector-Emitter Voltage (VGS = 0)
1200
V

VECR

 Emitter-Collector Voltage

20

V

VGE
 Gate-Emitter Voltage
±20
V
IC
 Collector Current (continuous) at Tc = 25 oC
10
A
IC
 Collector Current (continuous) at Tc = 100 oC
7
A
ICM()
 Collector Current (pulsed)
20
A
Ptot
 Total Dissipation at Tc = 25 oC
90
W
 Derating Factor
0.7
W/oC
Tstg
 Storage Temperature
65 to 150
oC
Tj
 Max.Operating Junction Temperature

150
oC



Description

Using the latest high voltage technology based on a patented strip layout, STGP7NB120SD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).




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