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STGP7NB60FD

ApplicationMOTOR CONTROLSSMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIESSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at Tc = 25 ...

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STGP7NB60FD: ApplicationMOTOR CONTROLSSMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIESSpecifications Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 ...

STGP7NB60FD Data Sheet

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Part Number:
STGP7NB60FD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Application

 MOTOR CONTROLS
 SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Collector-Emitter Voltage (VGS = 0)
600
V
VGE
 Gate-Emitter Voltage
± 20
V
IC
 Collector Current (continuous) at Tc = 25 oC
14
A
IC
 Collector Current (continuous) at Tc = 100 oC
7
A
ICM(•)
 Collector Current (pulsed)
56
A
Ptot
 Total Dissipation at Tc = 25 oC
80
W
 Derating Factor
0.64
W/oC
Tstg
 Storage Temperature
55 to 150
oC
 
Tj
 Max.Operating Junction Temperature

150

  
oC



Description

Using the latest high voltage technology based on a atented strip layout, STGP7NB60FD STMicroelectronics has designed n advanced family of IGBTs, the Power- ESH™ IGBTs, with outstanding perfomances. he suffix "F" identifies a family optimized to chieve very low switching switching times for high requency applications (<40KHZ)




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