STGP7NB60KD

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.8 V
Continuous Collector Current at 25 C : 14 A
Power Dissipation : 80 W


Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value			Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600			V
VECR	Emitter-Collector Voltage	20			V
VGE	Gate-Emitter Voltage	± 20			V
IC	Collector Current (continuous) at TC = 25°C	14	14	14	A
IC	Collector Current (continuous) at TC = 125°C	7	7	7	A
ICM(•)	Collector Current (pulsed)	50	50	50	A
If (1)	Forward Current	7			A
Ifm (1)	Forward Current Pulsed	56			A
Ptot	Total Dissipation at Tc = 25 oC	95	30	90	W
	Derating Factor	0.64	0.28	0.64	W/oC
VISO	Insulation Withstand Voltage A.C.	--	2500	--	V
Tstg	Storage Temperature	55 to 150 150			oC
Tj	Max.Operating Junction Temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGP7NB60KD STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

Parameters:

Technical/Catalog Information	STGP7NB60KD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	14A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Power - Max	80W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STGP7NB60KD STGP7NB60KD 497 4112 5 ND 49741125ND 497-4112-5