STGP7NC60HD

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Package / Case : TO-220FP-3
Power Dissipation : 80 W


Features:

 LOWER ON-VOLTAGE DROP (Vcesat)
 OFF LOSSES INCLUDE TAIL CURRENT
 LOSSES INCLUDE DIODE RECOVERY ENERGY
 LOWER CRES/CIES RATIO
 HIGH FREQUENCY OPERATION UP TO 70 KHz
 VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE
 NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION


Application

 HIGH FREQUENCY INVERTERS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
 MOTOR DRIVERS


Specifications

Symbol	Parameter	Value		Unit
		STGP7NC60HD STGB7NC60HD	STGF7NC60HD
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at TC = 25°C (#)	25	10	A
IC	Collector Current (continuous) at TC = 100°C (#)	14	6	A
ICM(•)	Collector Current (pulsed)	50		A
IF	Diode RMS Forward Current at TC = 25°C	20		A
Ptot	Total Dissipation at Tc = 25 oC	80	25	W
	Derating Factor	0.64	0.20	W/oC
VISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	--	2500	V
Tstg	Storage Temperature	55 to 150		oC
Tj	Operating Junction Temperature			oC

Description

Using the latest high voltage technology based on a patented strip layout, STGP7NC60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.