STGW20NC60V

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 60 A
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 2.5 V
Power Dissipation : 200 W


Features:

 OFF LOSSES INCLUDE TAIL CURRENT
 LOSSES INCLUDE DIODE RECOVERY ENERGY
 HIGH CURRENT CAPABILITY
 HIGH FREQUENCY OPERATION UP TO 50 KHz
 LOWER CRES / CIES RATIO
 NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION


Application

 HIGH FREQUENCY INVERTERS
 SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
 UPS
 MOTOR DRIVERS


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VECR	Emitter-Collector Voltage	20		V
VGE	Gate-Emitter Voltage	±20		V
IC	Collector Current (continuous) at 25°C (#)	60		A
IC	Collector Current (continuous) at 100°C (#)	30		A
ICM(•)	Collector Current (pulsed)	100		A
Ptot	Total Dissipation at Tc = 25 oC	200		W
	Derating Factor	1.6		W/oC
Tstg	Storage Temperature	55 to 150		oC
Tj	Operating Junction Temperature

Description

Using the latest high voltage technology based on a patented strip layout, STGW20NC60V STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for highfrequency.

Parameters:

Technical/Catalog Information	STGW20NC60V
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW20NC60V STGW20NC60V 497 4356 5 ND 49743565ND 497-4356-5