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STGW30N120KD

IGBT Transistors 30 A - 1200 V Rugged IGBT

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STGW30N120KD: IGBT Transistors 30 A - 1200 V Rugged IGBT

STGW30N120KD Data Sheet

floor Price/Ceiling Price

US $ 1.67~2.56 / Piece | Get Latest Price
Part Number:
STGW30N120KD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.56
  • $2.08
  • $1.85
  • $1.67
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 25 V Maximum Operating Temperature : + 125 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Packaging : Tube
Configuration : Single
Maximum Operating Temperature : + 125 C
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Maximum Gate Emitter Voltage : +/- 25 V


Features:

Low on-losses
High current capability
Low gate charge
Short circuit withstand time 10 s
IGBT co-packaged with ultra fast free-wheeling diode


Application

Motor control


Specifications

Symbol Parameter Value Unit
CES Collector-emitter voltage (VGE = 0) 1200 V
IC(1) Collector current (continuous) at 25 60 A
IC(1) Collector current (continuous) at 100 30 A
ICL(2) Turn-off latching current 100 A
ICP(3) Pulsed collector current 100 A
VGE Gate-emitter voltage ±25 V
tscw Short circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 , RG = 10 , VGE = 12 V		 10 s
PTOT Total dissipation at TC = 25 175 W
IF Diode RMS forward current at TC = 25 30 A
IFSM Surge non repetitive forward current tp = 10 ms
sinusoidal		 100 A
Tj Operating junction temperature 55 to 125
1. Calculated according to the iterative formula:IC(TC) =TJMAX TC/RTHJ C * VCESAT(MAX)(TC, IC)
2. Vclamp = 80% of VCES, Tj =150 , RG=10 , VGE=15 V
3. Pulse width limited by max. junction temperature allowed


Description

This STGW30N120KD IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.




Parameters:

Technical/Catalog InformationSTGW30N120KD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic3.85V @ 15V, 20A
Power - Max220W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGW30N120KD
STGW30N120KD
497 7015 5 ND
49770155ND
497-7015-5



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