STGW30NC120HD

Continuous Collector Current at 25 C :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.75 V
Package / Case : TO-247-3
Maximum Gate Emitter Voltage : +/- 25 V
Power Dissipation : 220 W
Gate-Emitter Leakage Current : +/- 100 nA


Features:

· LOW ON-LOSSES
· LOW ON-VOLTAGE DROP (Vcesat)
· HIGH CURRENT CAPABILITY
· HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
· LOW GATE CHARGE
· VERY HIGH FREQUENCY OPERATION
· LATCH CURRENT FREE OPERATION


Application

· HIGH FREQUENCY MOTOR CONTROL
· U.P.S
· WELDING EQUIPMENT
· INDUCTION HEATING


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	1200	V
IC Note 2	Collector Current (continuous) at 25	60	A
IC Note 2	Collector Current (continuous) at 100	30	A
ICM Note 1	Collector Current (pulsed)	120	A
VGE	Gate-Emitter Voltage	± 20	V
PTOT	Total Dissipation at TC=25	200	W
If	Diode RMS Forward Current at TC=25	200
Tj	Operating Junction Temperature	55 to 150
Tstg	Storage Temperature	55 to 150

Description

Using the latest high voltage technology based on its patented strip layout, STGW30NC120HD STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Parameters:

Technical/Catalog Information	STGW30NC120HD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 20A
Power - Max	220W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW30NC120HD STGW30NC120HD 497 5314 5 ND 49753145ND 497-5314-5