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STGW30NC60WD

IGBT Transistors PowerMESH" IGBT

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SeekIC No. : 00142364 Detail

STGW30NC60WD: IGBT Transistors PowerMESH" IGBT

STGW30NC60WD Data Sheet

floor Price/Ceiling Price

US $ 1.73~2.65 / Piece | Get Latest Price
Part Number:
STGW30NC60WD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.65
  • $2.15
  • $1.93
  • $1.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 100 nA Power Dissipation : 200 W
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3
Power Dissipation : 200 W


Parameters:

Technical/Catalog InformationSTGW30NC60WD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGW30NC60WD
STGW30NC60WD
497 5204 5 ND
49752045ND
497-5204-5



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