STGW33IH120D

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3
Maximum Gate Emitter Voltage : +/- 25 V
Power Dissipation : 220 W


Features:

Low saturation voltage
High current capability
Low switching loss
Very soft ultra fast recovery antiparallel diode


Application

Induction cooking, microwave oven
Soft switching application


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-emitter voltage (VGE = 0)	1200	V
IC (1)	Collector current (continuous) at 25	60	A
IC (1)	Collector current (continuous) at 100	30	A
ICL (2)	Turn-off latching current	45	A
ICP (3)	Pulsed collector current	45	A
VGE	Gate-emitter voltage	±25	V
PTOT	Total dissipation at TC = 25	220	W
IF	Diode RMS forward current at TC = 25	30	A
IFSM	Surge non repetitive forward current tp = 10 ms sinusoidal	100	A
Tj	Operating junction temperature	55 to 150

1. Calculated according to the iterative formula:
2. V_clamp = 80% of V_CES, T_j =150 °C, R_G=10 , V_GE=15 V
3. Pulse width limited by max. junction temperature allowed



Description

This STGW33IH120D IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. This device is well suited for the resonant or soft switching application.

Parameters:

Technical/Catalog Information	STGW33IH120D
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	220W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW33IH120D STGW33IH120D 497 8440 5 ND 49784405ND 497-8440-5