STGW40NC60WD

IGBT Transistors FAST N-CHANNEL

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STGW40NC60WD Picture
SeekIC No. : 00142584 Detail

STGW40NC60WD: IGBT Transistors FAST N-CHANNEL

floor Price/Ceiling Price

US $ 1.79~2.75 / Piece | Get Latest Price
Part Number:
STGW40NC60WD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.75
  • $2.44
  • $2
  • $1.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V/2.1 A Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA Power Dissipation : 250 W
Maximum Operating Temperature : + 150 C Package / Case : TO-247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 250 W
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 1.9 V/2.1 A


Features:

· Low CRES / CIES ratio (no cross conduction susceptibility)
· High frequency operation
· Very soft ultra fast recovery anti parallel diod



Application

· High frequency inverters, UPS
· Motor drivers
· HF, SMPS and PFC in both hard switch and resonant topologies
· Welding



Specifications

Symbol Parameter Value Unit
VCES Collector-emitter voltage (VGS = 0) 600 V
IC(1) Collector current (continuous) at 25 70 A
IC(1) Collector current (continuous) at 100 40 A
ICL (2) Turn-off SOA minimum current 230 A
VGE Gate-emitter voltage ±20 V
IF Diode RMS forward current at TC=25 15 A
PTOT Total dissipation at TC = 25 250 W
Tstg Operating junction temperature 55 to 150  
Tj Storage temperature
TL Maximum lead temperature for soldering
purpose (1.6mm from case, for 10sec.)
300  
1. Calculated according to the iterative formula:
IC(TC)= TJMAX TC/RTHJ C * VCESAT(MAX)(TC, IC)
2. Vclamp = 480V , Tj = 150, RG = 10, VGE= 15V



Description

Using the latest high voltage technology based on a patented strip layout, STGW40NC60WD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.




Parameters:

Technical/Catalog InformationSTGW40NC60WD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-247-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGW40NC60WD
STGW40NC60WD
497 5742 ND
4975742ND
497-5742



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