MFG:ST Package Cooled:02+ D/C:220
MFG: ST
Package Cooled: 02+
D/C: 220
Description: This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell ...
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
| Symbol | Parameter | Value | Unit | |
| STP10NA40 | STP10NA40FI | |||
| VDS | Drain-source Voltage (VGS = 0) | 400 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 400 | V | |
| VGS | Gate- source Voltage | ± 30 | V | |
| ID(*) | Drain Current (continuos) at TC = 25 |
10 |
6 | A |
| ID(*) | Drain Current (continuos) at TC = 100 | 6.3 | 3.8 | A |
| IDM() | Drain Current (pulsed) | 40 | 40 | A |
| PTOT | Total Dissipation at TC = 25 | 125 | 45 | W |
| Derating Factor | 1 | 0.36 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | _ | 2000 | V |
| Tstg | Storage Temperature | 65 to 150 | ||
| Tj | Max. Operating Junction Temperature | 150 | ||
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWERSUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
STP10NA40FI
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This series of POWER MOSFETS STP10NA40represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior sw...
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