STP10NB20

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	200		V
VDGR	Drain- gate Voltage (RGS = 20 k)	200		V
VGS	Gate-Source Voltage	± 30		V
ID	Drain Current (continuous) at Tc = 25	10	6	A
ID	Drain Current (continuous) at Tc = 100	6	4	A
IDM(`)	Drain Current (pulsed)	40	40	A
PTOT	Total Dissipation at Tc = 25	60	30	W
	Derating Factor	85	30	W/
dv/dt (1)	Peak Diode Recovery voltage slope	0.68	0.24	V/ns
VISO	Insulation Withstand Voltage (DC)	2000	2000	V
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	150

(•)Pulse width limited by safe operating area (1)ISD10A, di/dt300A/µs, V_DD(BR)DSS, Tj TJMAX



Description

Using the latest high voltage STP10NB20 MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.