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MFG:ST  Package Cooled:02+  D/C:220  

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Part Number: STP10NB50

 

MFG: ST

Package Cooled: 02+

D/C: 220

Description: Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an adv...


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STP10NB50 General Description


Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STP10NB50 Maximum Ratings

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k ) 500 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25
10.6
10.6(*) A
ID Drain Current (continuos) at TC = 100 6.4 6.4(*) A
IDM() Drain Current (pulsed) 42.4 42.4 A
PTOT Total Dissipation at TC = 25 135 40 W
  Derating Factor 1.08 0.32 W/
dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150

(•) Pulse width limited by safe operating area ( 1) ISD 10.6 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX (*) Limited only by maximum temperature allowed

STP10NB50 Features

 TYPICAL RDS(on) = 0.55
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED

STP10NB50 Typical Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLIES(SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

STP10NB50 datasheet

STP10NB50
PDF/DataSheet Download

  • Datasheet: STP10NB50
  • File Size: 108148 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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