MFG:ST Package Cooled:TO-220F D/C:08+
MFG: ST
Package Cooled: TO-220F
D/C: 08+
Description: Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an adv...
Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit | |
| STP16NB25 | STP16NB25FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 500 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuos) at TC = 25 |
10.6 |
10.6(*) | A |
| ID | Drain Current (continuos) at TC = 100 | 6.4 | 6.4(*) | A |
| IDM() | Drain Current (pulsed) | 42.4 | 42.4 | A |
| PTOT | Total Dissipation at TC = 25 | 135 | 40 | W |
| Derating Factor | 1.08 | 0.32 | W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | 4.5 | V/ns |
| VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
| Tstg | Storage Temperature | 65 to 150 | ||
| Tj | Max. Operating Junction Temperature | 150 | ||
(•) Pulse width limited by safe operating area ( 1) ISD 10.6 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX (*) Limited only by maximum temperature allowed
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE
STP10NB50FP
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