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STP10NC50

Features: TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES(SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND M...

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STP10NC50: Features: TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITCH MOD...

STP10NC50 Data Sheet

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Part Number:
STP10NC50
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.48
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k ) 500 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25
 10
 10(*) A
ID Drain Current (continuos) at TC = 100 6.3 6.3(*) A
IDM() Drain Current (pulsed) 40 40 A
PTOT Total Dissipation at TC = 25 135 40 W
  Derating Factor 1.08 0.32 W/
dv/dt (1) Peak Diode Recovery voltage slope 3 3 V/ns
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150
(•) Pulse width limited by safe operating area  (1) ISD  10 A, di/dt 100 A/s, VDD V(BR)DSS, Tj TJMAX (*) Limited only by maximum temperature allowed


Description

Using the latest high voltage STP10NC50 ESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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