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STP10NK60FP

Features: ` TYPICAL RDS(on) = 0.65 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES ` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGS...

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SeekIC No. : 004508320 Detail

STP10NK60FP: Features: ` TYPICAL RDS(on) = 0.65 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES ` VERY GOOD MANUFACTURING REPEATIBILITYApplication...

STP10NK60FP Data Sheet

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Part Number:
STP10NK60FP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 0.65
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  GATE CHARGE MINIMIZED
 `  VERY LOW INTRINSIC CAPACITANCES 
 `  VERY GOOD MANUFACTURING REPEATIBILITY


Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
 ·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
TO-220/
D2PAK/I2PAK		 TO-220FP TO-247
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
10
10(*)
 10
A
ID Drain Current (continuos) at TC = 100
5.7
5.7(*)
 5.7
A
IDM() Drain Current (pulsed)
36
36(*)
 36
A
Ptot Total Dissipation at TC = 25
115
35
 156
W
Derating Factor
0.92
0.28
 1.25
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
 -
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 150
() Pulse width limited by safe operating area
(1) ISD 10 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

The STP10NK60FP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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