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Part Number: STP10NK60FP

 

 

 

 

Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...


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STP10NK60FP General Description


The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STP10NK60FP Maximum Ratings

Symbol Parameter
Value
Unit
TO-220/
D2PAK/I2PAK		 TO-220FP TO-247
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
± 30
V
ID Drain Current (continuos) at TC = 25
10
10(*)
 10
A
ID Drain Current (continuos) at TC = 100
5.7
5.7(*)
 5.7
A
IDM() Drain Current (pulsed)
36
36(*)
 36
A
Ptot Total Dissipation at TC = 25
115
35
 156
W
Derating Factor
0.92
0.28
 1.25
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
 -
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
55 to 150
() Pulse width limited by safe operating area
(1) ISD 10 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.

STP10NK60FP Features

 `  TYPICAL RDS(on) = 0.65
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  GATE CHARGE MINIMIZED
 `  VERY LOW INTRINSIC CAPACITANCES 
 `  VERY GOOD MANUFACTURING REPEATIBILITY

STP10NK60FP Typical Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
 ·  LIGHTING

STP10NK60FP datasheet

STP04CM596B1R
PDF/DataSheet Download

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