MFG:ST Package Cooled:1577 D/C:IC
MFG: ST
Package Cooled: 1577
D/C: IC
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter |
Value |
Unit | ||
| TO-220/ D2PAK/I2PAK |
TO-220FP | TO-247 | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | ||
| VGS | Gate- source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
10 |
10(*) |
10 |
A |
| ID | Drain Current (continuos) at TC = 100 |
5.7 |
5.7(*) |
5.7 |
A |
| IDM() | Drain Current (pulsed) |
36 |
36(*) |
36 |
A |
| Ptot | Total Dissipation at TC = 25 |
115 |
35 |
156 |
W |
| Derating Factor |
0.92 |
0.28 |
1.25 |
W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
4000 |
V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
- |
V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 |
|||
STP10NK60Z
PDF/DataSheet Download
The STP10NK60FP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabi...
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