STP10NK60ZFP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 750 mOhms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.65
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEABILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTOR AND PFC
· LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		TO-220/D²/I²PAK	TO-220FP	TO-247
VDS	Drain-Source Voltage (VGS = 0)	600			V
VDGR	Drain-gate Voltage (RGS = 20k)	600			V
VGS	Gate-Source Voltage	±30			V
ID	Drain Current (continuous) at TC = 25°C	10	10 3	10	A
ID	Drain Current (continuous) at TC = 100°C	5.7	5.7 3	5.7	A
IDM 2	Drain Current (pulsed)	36	36 3	36	A
PTOT	Total Dissipation at TC = 25°C	115	35	156	W
	Derating Factor	0.92	0.28	1.25	W/°C
Vesd(G-S)	G-S ESD (HBM C=100pF, R=1.5k)	4000			V
dv/dt 1	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Volatge (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150			°C

(1) I_SD 10A, di/dt 200A/s, V_DD V_(BR)DSS, Tj T_JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed


Description

The STP10NK60ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.