MFG:ST Package Cooled:1546 D/C:IC
MFG: ST
Package Cooled: 1546
D/C: IC
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | ||
|
TO-220/D²/I²PAK |
TO-220FP |
TO-247 |
|||
|
VDS |
Drain-Source Voltage (VGS = 0) |
600 |
V | ||
|
VDGR |
Drain-gate Voltage (RGS = 20k) |
600 |
V | ||
|
VGS |
Gate-Source Voltage |
±30 |
V | ||
|
ID |
Drain Current (continuous) at TC = 25°C |
10 |
10 3 |
10 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
5.7 |
5.7 3 |
5.7 |
A |
|
IDM 2 |
Drain Current (pulsed) |
36 |
36 3 |
36 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
115 |
35 |
156 |
W |
| Derating Factor |
0.92 |
0.28 |
1.25 |
W/°C | |
|
Vesd(G-S) |
G-S ESD (HBM C=100pF, R=1.5k) |
4000 |
V | ||
|
dv/dt 1 |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
|
VISO |
Insulation Withstand Volatge (DC) |
- |
2500 |
- |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
°C | ||
STP10NK60ZFP
PDF/DataSheet Download
The STP10NK60Z/FP SuperMESH] series is obtained through an extreme optimization of ST's well established stripbased PowerMESH] layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for t...
The STP10NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabil...
The STP10NK60FP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabi...
MOSFET N-CH 500V 9A TO-220
Using the latest high voltage STP10NC50FP MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination st...
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