STP10NK70Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 700 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 850 mOhms
Continuous Drain Current : 8.6 A


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	700		V
VDGR	Drain- gate Voltage (RGS = 20 k)	700		V
VGS	Gate-Source Voltage	± 30		V
ID	Drain Current (continuous) at Tc = 25	9	9 (*)	A
ID	Drain Current (continuous) at Tc = 100	6	6 (*)	A
IDM(`)	Drain Current (pulsed)	36	36 (*)	A
PTOT(1)	Total Dissipation at Tc = 25	160	40	W
	Derating Factor	1.28	0.32	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KW)	4		KV
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)		2500	V
Tstg Tj	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(•)Pulse width limited by safe operating area (1)ISD8.6A, di/dt200A/µs, V_DDV(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

The STP10NK70Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.