STP10NK70ZFP

MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A

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SeekIC No. : 00155827 Detail

STP10NK70ZFP: MOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A

floor Price/Ceiling Price

US $ .95~1.26 / Piece | Get Latest Price
Part Number:
STP10NK70ZFP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~610
  • 610~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.26
  • $1.06
  • $.97
  • $.95
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 8.6 A
Resistance Drain-Source RDS (on) : 0.85 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 700 V
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.85 Ohms
Continuous Drain Current : 8.6 A


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain- gate Voltage (RGS = 20 k)
700
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25
9
9 (*)
A
ID

Drain Current (continuous) at Tc = 100
6
6 (*)
A
IDM(`)
Drain Current (pulsed)
36
36 (*)
A
PTOT(1)
Total Dissipation at Tc = 25
160
40
W
Derating Factor
1.28
0.32
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KW)
4
KV
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
2500
V
Tstg
Tj
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150

(•)Pulse width limited by safe operating area (1)ISD8.6A, di/dt200A/µs, VDDV(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

The STP10NK70ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTP10NK70ZFP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25° C8.6A
Rds On (Max) @ Id, Vgs850 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 25V
Power - Max35W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP10NK70ZFP
STP10NK70ZFP



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