Position: Home  > All Categories> Integrated Circuits (ICs) > STP11NB40FP

STP11NB40FP

Features: TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES(SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND M...

product image

STP11NB40FP Picture
See larger image
SeekIC No. : 004508322 Detail

STP11NB40FP: Features: TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHING SWITCH MOD...

STP11NB40FP Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP11NB40FP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 TYPICAL RDS(on) = 0.48
EXTREMELY HIGH dV/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE




Specifications

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 400 V
VDGR Drain-gate Voltage (RGS = 20 k ) 400 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuos) at TC = 25
 10.7
6.0 A
ID Drain Current (continuos) at TC = 100 6.7 3.8 A
IDM() Drain Current (pulsed) 42.8 42.8 A
PTOT Total Dissipation at TC = 25 125 40 W
  Derating Factor 1.0 0.32 W/
dv/dt (1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
VISO Insulation Withstand Voltage (DC)

-----

2000 V
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175

(•) Pulse width limited by safe operating area ( 1) ISD  10.7A, di/dt  200 A/ms, VDD  V(BR)DSS, Tj  TJMAX




Description

Using the latest high voltage STP11NB40FP MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
LED Products
LM24P20
KCG057QV1DB-G770
Isolators
HCPL062N
HCPL316J
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Line Protection, Backups
BX0023
A20B-1008-0550
Resistors
A101G
3006P-1-205LF
View more