STP11NK40ZFP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.55 Ohms
Drain-Source Breakdown Voltage : 400 V


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.49
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
 · LIGHTING


Specifications

Symbol	Parameter	Value		Unit
		STP11NK40Z STB11NK40Z	STP11NK40ZFP
VDS	Drain-source Voltage (VGS = 0)	400		V
VDGR	Drain-gate Voltage (RGS = 20 k)	400		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	9	9(*)	A
ID	Drain Current (continuos) at TC = 100	5.67	5.67(*)	A
IDM(`)	Drain Current (pulsed)	36	36(*)	A
PTOT	Total Dissipation at TC = 25	110	30	W
	Derating Factor	0.88	0.24	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	3500		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	--	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 9A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STP11NK40ZFP SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STP11NK40ZFP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	550 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	930pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	TO-220FP
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP11NK40ZFP STP11NK40ZFP