Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 11 A
Resistance Drain-Source RDS (on)
: 0.45 Ohms
Features: ` TYPICAL RDS(on) = 0.4
` HIGH dv/dt
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Specifications
| Symbol |
Parameter |
Value |
Unit |
STP11NM60A
STB11NM60A-1 |
STP11NM60AFP |
| VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS |
Gate- source Voltage |
±30 |
V |
| ID |
Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID |
Drain Current (continuos) at TC = 100 |
7 |
7(*) |
A |
| IDM(`) |
Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT |
Total Dissipation at TC = 25 |
110 |
35 |
W |
|
Derating Factor |
0.88 |
0.28 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
20 |
V/ns |
| VISO |
Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150
-55 to 150 |
|
(
`) Pulse width limited by safe operating area
(1) ISD 11A, di/dt200A/s, VDDV(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowedDescriptionThe STP11NM60A MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Parameters: | Technical/Catalog Information | STP11NM60A |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1211pF @ 25V |
| Power - Max | 110W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STP11NM60A
STP11NM60A
497 4368 5 ND
49743685ND
497-4368-5
|
STP11NM60A Data Sheet
