STP11NM60FD

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.40
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
`TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

</TABLE

Symbol	Parameter	Value		Unit
		STP11NM60FD STB11NM60FD STB11NM60FD-1	STP11NM60FDFP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	11	11(*)	A
ID	Drain Current (continuos) at TC = 100	7	7(*)	A
IDM(`)	Drain Current (pulsed)	44	44(*)	A
PTOT	Total Dissipation at TC = 25	160	35	W
	Derating Factor	0.88	0.28	W/
dv/dt (1)	Peak Diode Recovery voltage slope	20		V/ns
VISO	Insulation Winthstand Voltage (DC)	-	2500	V
Tstg	Storage Temperature	65 to 150
Tj	Max. Operating Junction Temperature

(`)Pulse width limited by safe operating area
(1) I_SD 11A, di/dt 400 A/s, V_DD V_(BR)/DSS, T_j T_JMAX
(*) Limited only by maximum temperature allowed


Description

The STP11NM60FD FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.