STP11NM60FDFP

MOSFET N-Ch 600 Volt 11 Amp

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SeekIC No. : 00159679 Detail

STP11NM60FDFP: MOSFET N-Ch 600 Volt 11 Amp

floor Price/Ceiling Price

Part Number:
STP11NM60FDFP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

` TYPICAL RDS(on) = 0.40
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
`TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS



Application

· ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT


Specifications

</TABLE
Symbol Parameter
Value
Unit
STP11NM60FD
STB11NM60FD
STB11NM60FD-1
STP11NM60FDFP
VDS Drain-source Voltage (VGS = 0)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)
600
V
VGS Gate- source Voltage
±30
V
ID Drain Current (continuos) at TC = 25
11
11(*)
A
ID Drain Current (continuos) at TC = 100
7
7(*)
A
IDM(`) Drain Current (pulsed)
44
44(*)
A
PTOT Total Dissipation at TC = 25
160
35
W
Derating Factor
0.88
0.28
W/
dv/dt (1) Peak Diode Recovery voltage slope
20
V/ns
VISO Insulation Winthstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
65 to 150
Tj Max. Operating Junction Temperature
(`)Pulse width limited by safe operating area
(1) ISD 11A, di/dt 400 A/s, VDD V(BR)/DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed



Description

The STP11NM60FDFP FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.




Parameters:

Technical/Catalog InformationSTP11NM60FDFP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs450 mOhm @ 5.5A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 25V
Power - Max35W
PackagingTube
Gate Charge (Qg) @ Vgs40nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP11NM60FDFP
STP11NM60FDFP
497 5392 5 ND
49753925ND
497-5392-5



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