Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220FP
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 11 A
Resistance Drain-Source RDS (on)
: 0.45 Ohms
Features: ` TYPICAL RDS(on) = 0.4
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCEApplicationThe MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Specifications
| Symbol |
Parameter |
Value |
Unit |
| STP(B)11NM60(-1) |
STP11NM60FP |
| VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS |
Gate- source Voltage |
±30 |
V |
| ID |
Drain Current (continuos) at TC = 25 |
11 |
11(*) |
A |
| ID |
Drain Current (continuos) at TC = 100 |
7 |
7(*) |
A |
| IDM(`) |
Drain Current (pulsed) |
44 |
44(*) |
A |
| PTOT |
Total Dissipation at TC = 25 |
160 |
35 |
W |
|
Derating Factor |
1.28 |
0.28 |
W/ |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
20 |
V/ns |
| VISO |
Insulation Winthstand Voltage (DC) |
- |
2500 |
V |
| Tstg |
Storage Temperature |
65 to 150 |
|
Tj
|
Max. Operating Junction Temperature |
150
|
|
(`)Pulse width limited by safe operating area
(1) ISD 11 A, di/dt 400 A/s, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed DescriptionThe STP11NM60FP MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products
STP11NM60FP Data Sheet
