STP12NK30Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Drain-Source Breakdown Voltage : 300 V


Application

LIGHTING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
HIGH CURRENT, HIGH SPEED SWITCHING


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	300	V
VDGR	Drain- gate Voltage (RGS = 20 k)	300	V
VGS	Gate-Source Voltage	± 30	V
ID	Drain Current (continuous) at Tc = 25 Drain Current (continuous) at Tc = 100	9 5.6	A A
IDM(`)	Drain Current (pulsed)	36	A
PTOT	Total Dissipation at Tc = 25	90	W
	Derating Factor	0.72	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KW)	3000	V/ns
dv/dt (2)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg	Storage Temperature	-55 to 150
Tj	Max. Operating Junction Temperature

1. Pulse width limited by safe operating area
2. ISD< 9A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX


Description

The STP12NK30Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such STP12NK30Z series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.