STP12PF06

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 200 mOhms


Features:

TYPICAL RDS(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED CHARACTERIZATION


Application

MOTOR CONTROL
DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value		Unit
		STP20PF06	STF20PF06
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain-gate Voltage (RGS = 20 kW)	60		V
VGS	Gate- source Voltage	±20		V
ID	Drain Current (continuos) at TC = 25°C	12	8	A
ID	Drain Current (continuos) at TC = 100°C	8.4	5.6	A
IDM ()	Drain Current (pulsed)	48	32	A
PTOT	Total Dissipation at TC = 25°C	60	225	W
	Derating Factor	0.4	0.17	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	4		V/ns
EAS(2)	Single Pulse Avalanche Energy	200		mJ
Tstg	Storage Temperature	-55 to 175		°C
Tj	Max. Operating Junction Temperature			°C

Description

This Power MOSFET STP12PF06 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility

Parameters:

Technical/Catalog Information	STP12PF06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	200 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	850pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	21nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP12PF06 STP12PF06 497 2721 5 ND 49727215ND 497-2721-5