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STP13NK50Z: MOSFET 500V 0.40& 11A N-Channel

STP13NK50Z Data Sheet

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Part Number:: STP13NK50Z
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2025/12/7

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	11 A
Resistance Drain-Source RDS (on) :	0.48 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.48 Ohms
Continuous Drain Current : 11 A

Parameters:

Technical/Catalog Information	STP13NK50Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	480 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	47nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP13NK50Z STP13NK50Z 497 7504 5 ND 49775045ND 497-7504-5

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STP13NK50Z

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