STP13NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.55 Ohms


Features:

 ` TYPICAL R<sub>DS(on)</sub> = 0.48
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` GATE CHARGE MINIMIZED
 ` VERY LOW INTRINSIC CAPACITANCES
 ` VERY GOOD MANUFACTURING REPEATIBILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
· LIGHTING


Specifications

Symbol	Parameter	Value		Unit
		STP13NK60Z STB13NK60Z/-1 STW13NK60Z	STP13NK60ZFP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	± 30		V
ID	Drain Current (continuos) at TC = 25	13	13(*)	A
ID	Drain Current (continuos) at TC = 100	8.0	8.2(*)	A
IDM()	Drain Current (pulsed)	52	52(*)	A
Ptot	Total Dissipation at TC = 25	1.20	35	W
	Derating Factor	2.08	0.27	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150

() Pulse width limited by safe operating area
(1) I_SD 13 A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The SuperMESH™ series STP13NK60Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.