STP140NF55

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 8 mOhms


Features:

TYPE	VDSS	RDS(on)	ID
STB140NF55 STP140NF55	55 V 55 V	< 0.008 < 0.008	80 A 80 A

TYPICAL RDS(on) = 0.0065


Application

MOTOR CONTROL
HIGH CURRENT, SWITCHING APPLICATIONS
AUTOMOTIVE ENVIRONMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	55	V
VGS	Gate-source Voltage	±20	V
ID	Drain Current (continuous) at Tc = 25 °C	80	A
ID	Drain Current (continuous) at Tc = 100 °C	80	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25 °C	300	W
	Derating Factor	2	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	10	V/ns
EAS(2)	Single Pulse Avalanche Energy	1.3	mJ
Tstg	Storage Temperature	-55 to 175	°C
Tj	Max. Operating Junction Temperature

Description

This Power Mosfet STP140NF55 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parameters:

Technical/Catalog Information	STP140NF55
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	8 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds	5300pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	142nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP140NF55 STP140NF55 497 4370 5 ND 49743705ND 497-4370-5