STP140NF75

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 7.5 mOhms


Features:

 ` TYPICAL R<sub>DS(on)</sub> = 0.0065
 ` SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE


Application

· HIGH CURRENT, HIGH SWITCHING SPEED
· SOLENOID AND RELAY DRIVERS
· AUTOMOTIVE 42V BATTERY DRIVERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	75	V
VDGR	Drain-gate Voltage (RGS = 20 k)	75	V
VGS	Gate- source Voltage	±20	V
ID(**)	Drain Current (continuos) at TC = 25	120	A
ID	Drain Current (continuos) at TC = 100	100	A
IDM()	Drain Current (pulsed)	480	A
Ptot	Total Dissipation at TC = 25	310	W
	Derating Factor	2.08	W/
dv/dt (1)	Peak Diode Recovery voltage slope	10	V/ns
EAS(2)	Single Pulse Avalanche Energy	750	mJ
Tstg	Storage Temperature	-55 to 175
Tj	Operating Junction Temperature

(`) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I_SD120A, di/dt400A/s, V_DD V_(BR)DSS, T_jT^JMAX
(2) Starting T_j = 25 ,I_D = 60 A, V_DD = 30V


Description

This Power MOSFET  STP140NF75 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.