STP14NF12

MOSFET N-Ch, 120V-0.16ohms 14A

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SeekIC No. : 00158998 Detail

STP14NF12: MOSFET N-Ch, 120V-0.16ohms 14A

floor Price/Ceiling Price

US $ .34~.39 / Piece | Get Latest Price
Part Number:
STP14NF12
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1300
  • 1300~2000
  • 2000~5000
  • Unit Price
  • $.39
  • $.35
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 120 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 120 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.18 Ohms


Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
120
V
VDGR
Drain- gate Voltage (RGS = 20 k)
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25
14
8.5
A
ID

Drain Current (continuous) at Tc = 100
9
6
A
IDM(`)
Drain Current (pulsed)
56
34
A
PTOT
Total Dissipation at Tc = 25
60
25
W
Derating Factor
0.4
0.17
W/
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
EAS (2)
Single Pulse Avalanche Energy
60
MJ
VISO
Insulation Withstand Voltage (DC)
2500
V
Tstg
Storage Temperature
-55 to 175

Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD14A, di/dt300A/µs, VDD(BR)DSS, Tj TJMAX
(2) Starting Tj = 25°C, ID = 14A, VDD = 50V


Description

This STP14NF12 Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements




Parameters:

Technical/Catalog InformationSTP14NF12
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs180 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP14NF12
STP14NF12



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