STP14NF12FP

MOSFET N-Ch, 120V-0.16ohms 14A

product image

STP14NF12FP Picture
SeekIC No. : 00158981 Detail

STP14NF12FP: MOSFET N-Ch, 120V-0.16ohms 14A

floor Price/Ceiling Price

US $ .35~.39 / Piece | Get Latest Price
Part Number:
STP14NF12FP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1360
  • 1360~2000
  • 2000~5000
  • Unit Price
  • $.39
  • $.37
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/22

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 120 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.5 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220FP
Drain-Source Breakdown Voltage : 120 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Continuous Drain Current : 8.5 A


Application

HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
120
V
VDGR
Drain- gate Voltage (RGS = 20 k)
120
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current (continuous) at Tc = 25
14
8.5
A
ID

Drain Current (continuous) at Tc = 100
9
6
A
IDM(`)
Drain Current (pulsed)
56
34
A
PTOT
Total Dissipation at Tc = 25
60
25
W
Derating Factor
0.4
0.17
W/
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
EAS (2)
Single Pulse Avalanche Energy
60
MJ
VISO
Insulation Withstand Voltage (DC)
2500
V
Tstg
Storage Temperature
-55 to 175

Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD14A, di/dt300A/µs, VDD(BR)DSS, Tj TJMAX
(2) Starting Tj = 25°C, ID = 14A, VDD = 50V


Description

This Power MOSFET series STP14NF12FP realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements




Parameters:

Technical/Catalog InformationSTP14NF12FP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C8.5A
Rds On (Max) @ Id, Vgs180 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 460pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs21nC @ 10V
Package / CaseTO-220FP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP14NF12FP
STP14NF12FP



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Programmers, Development Systems
Optoelectronics
Hardware, Fasteners, Accessories
Integrated Circuits (ICs)
View more