STP14NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 13.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.45
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
·  LIGHTING


Specifications

</TABLE

Symbol	Parameter	Value		Unit
		STP15NK50Z STB15NK50Z STB15NK50Z-1	STP15NK50ZFP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 k)	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	13.5	13.5(*)	A
ID	Drain Current (continuos) at TC = 100	8.5	8.5(*)	A
IDM(`)	Drain Current (pulsed)	54	54(*)	A
PTOT	Total Dissipation at TC = 25	160	40	W
	Derating Factor	1.28	0.32	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
VISO	Insulation Withstand Voltage (DC)	--	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 13.5A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STP14NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.