MFG:ST Package Cooled:TO-220 D/C:08+
MFG: ST
Package Cooled: TO-220
D/C: 08+
Description: Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad...
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit | |
| STP16NB25 | STP16NB25FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 250 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 250 | V | |
| VGS | Gate- source Voltage | ± 30 | V | |
| ID | Drain Current (continuos) at TC = 25 |
16 |
8 | A |
| ID | Drain Current (continuos) at TC = 100 | 10 | 5 | A |
| IDM() | Drain Current (pulsed) | 64 | 32 | A |
| PTOT | Total Dissipation at TC = 25 | 140 | 45 | W |
| Derating Factor | 1.12 | 0.36 | W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 5.5 | 5.5 | V/ns |
| VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
| Tstg | Storage Temperature | 65 to 150 | ||
| Tj | Max. Operating Junction Temperature | 150 | ||
STP16NB25
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