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STP16NB25FP

Features: TYPICAL RDS(on) = 0.220 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHINGUNINTERRUPTIBLE POWER SUPPLY (UPS)DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMEN...

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STP16NB25FP: Features: TYPICAL RDS(on) = 0.220 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZEDApplicationHIGH CURRENT, HIGH SPEED SWITCHINGUNINTERRUP...

STP16NB25FP Data Sheet

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Part Number:
STP16NB25FP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.220
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED


Application

HIGH CURRENT, HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT


Specifications

Symbol Parameter Value Unit
STP16NB25 STP16NB25FP
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 k ) 250 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuos) at TC = 25
 16
 8 A
ID Drain Current (continuos) at TC = 100 10 5 A
IDM() Drain Current (pulsed) 64 32 A
PTOT Total Dissipation at TC = 25 140 45 W
Derating Factor 1.12 0.36 W/
dv/dt (1) Peak Diode Recovery voltage slope 5.5 5.5 V/ns
VISO Insulation Withstand Voltage (DC) ----- 2000 V
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150
(•) Pulse width limited by safe operating area (1) ISD  16A, di/dt  200 A/ms, VDD  V(BR)DSS, Tj  TJMAX


Description

Using the latest high voltage STP16NB25FP MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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