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MFG:ST  Package Cooled:TO-220  D/C:08+  

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Part Number: STP16NE06

 

MFG: ST

Package Cooled: TO-220

D/C: 08+

Description: This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size"process whereby...


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STP16NE06 General Description


This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size"process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP16NE06 Maximum Ratings

Symbol Parameter Value Unit
STP16NE06 STP16NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
 16
11 A
ID Drain Current (continuos) at TC = 100 10 7 A
IDM() Drain Current (pulsed) 64 64 A
PTOT Total Dissipation at TC = 25 60 30 W
  Derating Factor 0.4 0.2 W/
VISO Insulation Withstand Voltage (DC) ----- 2000 V
dV/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175
(•) Pulse width limited by safe operating area   ( 1) ISD  20 A, di/dt   300 A/s, VDD   V(BR)DSS, Tj   TJMAX

STP16NE06 Features

TYPICAL RDS(on) = 0.08
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175oC OPERATING TEMPERATURE
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED CHARACTERIZATION

STP16NE06 Typical Application

DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION

STP16NE06 datasheet

STP16NE06
PDF/DataSheet Download

  • Datasheet: STP16NE06
  • File Size: 345205 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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