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Part Number: STP16NE06L

 

 

 

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Description: This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body i...


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STP16NE06L General Description


This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

STP16NE06L Maximum Ratings

Symbol Parameter Value Unit
STP16NE06L STP16NE06LFP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain- gate Voltage (RGS = 20 kW) 60 V
VGS Gate-source Voltage ± 15 V
ID Drain Current (continuous) at Tc = 25 16 11 A
ID Drain Current (continuous) at Tc = 100 10 7 A
IDM(•) Drain Current (pulsed) 64 64 A
Ptot Total Dissipation at Tc = 25 60 30 W
  Derating Factor 0.4 0.2 W/oC
VISO Insulation Withstand Voltage (DC) - 2000 V
dV/dt Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65 to 175  
Tj Max. Operating Junction Temperature 175  
(•) Pulse width limited by safe operating area (1) ISD 3 16 A,di/dt 3 200 A/ms, VDD 3 V(BR)DSS, Tj 3 TJMAX

STP16NE06L Typical Application

· DC MOTOR CONTROL
· DC-DC & DC-AC CONVERTERS
· SYNCHRONOUS RECTIFICATION

STP16NE06L datasheet

STP16NE06L
PDF/DataSheet Download

  • Datasheet: STP16NE06L
  • File Size: 72365 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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