STP16NE06L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220
Continuous Drain Current : 16 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.12 Ohms


Application

· DC MOTOR CONTROL
· DC-DC & DC-AC CONVERTERS
· SYNCHRONOUS RECTIFICATION


Specifications

Symbol	Parameter	Value		Unit
		STP16NE06L	STP16NE06LFP
VDS	Drain-source Voltage (VGS = 0)	60		V
VDGR	Drain- gate Voltage (RGS = 20 kW)	60		V
VGS	Gate-source Voltage	± 15		V
ID	Drain Current (continuous) at Tc = 25	16	11	A
ID	Drain Current (continuous) at Tc = 100	10	7	A
IDM(•)	Drain Current (pulsed)	64	64	A
Ptot	Total Dissipation at Tc = 25	60	30	W
	Derating Factor	0.4	0.2	W/oC
VISO	Insulation Withstand Voltage (DC)	-	2000	V
dV/dt	Peak Diode Recovery voltage slope	6		V/ns
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

(•) Pulse width limited by safe operating area (1) I_SD 3 16 A,di/dt 3 200 A/ms, V_DD 3 V_(BR)DSS, T_j 3 T_JMAX


Description

This Power Mosfet STP16NE06L is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.