STP16NF06

The STP16NF06 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features of the STP16NF06 are:(1)typical rds(on) = 0.08; (2)exceptional dv/dt capability; (3)low gate charge at 100 oc; (4)application oriented characterization.

The absolute maximum ratings of the STP16NF06 can be summarized as:(1)VDS Drain-source Voltage (VGS = 0): 60 V; (2)VDGR Drain-gate Voltage (RGS = 20 k): 60 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuous) at TC = 25°C :16  A; (5)ID Drain Current (continuous) at TC = 100°C :11  A; (6)IDM(?) Drain Current (pulsed) :64  A; (7)Ptot Total Dissipation at TC = 25°C :45  W; (8)Derating Factor : 0.17 W/°C; (9)dv/dt  Peak Diode Recovery voltage slope :20 V/ns; (10)EAS  Single Pulse Avalanche Energy :130 mJ.

If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .