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MFG:ST Package Cooled:1599 D/C:IC


Part Number: STP16NF06FP
MFG: ST
Package Cooled: 1599
D/C: IC
Description: This Power MOSFET is the latest development o...
MFG:ST Package Cooled:1599 D/C:IC


MFG: ST
Package Cooled: 1599
D/C: IC
Description: This Power MOSFET is the latest development o...
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.namespace prefix = o ns = "urn:schemas-microsoft-com:office:office" />
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZF |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V | |
|
VGS |
Gate-Source Voltage |
± 20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
16 |
11 (*)
|
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
11 |
7.5 (*)
|
A |
|
IDM(`) |
Drain Current (pulsed) |
64 |
44 (*)
|
A |
|
PTOT |
Total Dissipation at Tc = 25 |
45 |
25 |
W |
|
Derating Factor |
0.3 |
0.17 |
W/ | |
| dv/dt (1) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
20 |
V/ns | |
|
EAS (2) |
Peak Diode Recovery voltage slope |
130 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
2500
|
V | |
|
Tstg |
Storage Temperature |
-55 to 175 |
| |
| Tj | Operating Junction Temperature | |||
STP16NF06FP
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