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Part Number: STP16NF06L
Description: This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" s...


Description: This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" s...
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP16NF06L |
STP16NF06LFP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V | |
| VGS |
Gate- source Voltage |
±20 |
V | |
| ID |
Drain Current (continuos) at TC = 25°C |
16 |
11(*) |
A |
| ID |
Drain Current (continuos) at TC = 100°C |
11 |
7.5(*) |
A |
| IDM () |
Drain Current (pulsed) |
64 |
44(*) |
A |
| PTOT |
Total Dissipation at TC = 25°C |
45 |
25 |
W |
|
Derating Factor |
0.3 |
0.17 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
23 |
V/ns | |
| EAS (2) |
Single Pulse Avalanche Energy |
127 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
-------- |
2500 |
V |
| Tstg |
Storage Temperature |
-55 to 175 |
°C | |
| Tj |
Max. Operating Junction Temperature |
-55 to 175 |
°C | |
STP16NF06L
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