MFG:ST Package Cooled:TO-220F D/C:08+
MFG: ST
Package Cooled: TO-220F
D/C: 08+
Description: This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" s...
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP16NF06L |
STP16NF06LFP | |||
| VDS |
Drain-source Voltage (VGS = 0) |
60 |
V | |
| VDGR |
Drain-gate Voltage (RGS = 20 k) |
60 |
V | |
| VGS |
Gate- source Voltage |
±20 |
V | |
| ID |
Drain Current (continuos) at TC = 25°C |
16 |
11(*) |
A |
| ID |
Drain Current (continuos) at TC = 100°C |
11 |
7.5(*) |
A |
| IDM () |
Drain Current (pulsed) |
64 |
44(*) |
A |
| PTOT |
Total Dissipation at TC = 25°C |
45 |
25 |
W |
|
Derating Factor |
0.3 |
0.17 |
W/°C | |
| dv/dt (1) |
Peak Diode Recovery voltage slope |
23 |
V/ns | |
| EAS (2) |
Single Pulse Avalanche Energy |
127 |
mJ | |
| VISO |
Insulation Withstand Voltage (DC) |
-------- |
2500 |
V |
| Tstg |
Storage Temperature |
-55 to 175 |
°C | |
| Tj |
Max. Operating Junction Temperature |
-55 to 175 |
°C | |
STP16NF06LFP
PDF/DataSheet Download
The STP16NF06L is designed as one kind of N-channel 60V - 0.07 W - 16A TO-220/TO-220FP STripFET. II power MOSFET that shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a r...
This STP16NF06FP Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and les...
The STP16NF06 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and le...
This STP16NE06L/FP Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, ...
This Power Mosfet STP16NE06L is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rug...
This Power Mosfet STP16NE06FPis the latest development of SGS-THOMSON unique "Single Feature Size"process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugge...
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