STP16NK65Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

 ` TYPICAL R<sub>DS(on)</sub> = 0.38
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` GATE CHARGE MINIMIZED
 ` VERY LOW INTRINSIC CAPACITANCES
 ` VERY GOOD MANUFACTURING REPEATIBILITY


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · IDEAL FOR OFF-LINE POWER SUPPLIES


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	650	V
VDGR	Drain-gate Voltage (RGS = 20 k)	650	V
VGS	Gate- source Voltage	±30	V
ID	Drain Current (continuos) at TC = 25	13	A
ID	Drain Current (continuos) at TC = 100	8.19	A
IDM()	Drain Current (pulsed)	52	A
PTOT	Total Dissipation at TC = 25	190	W
	Derating Factor	1.51	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	6000	V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150

(*) Pulse width limited by safe operating area
(1) I_SD 13 A, di/dt 200 A/s, V_DD V_(BR)DSS,T_j T_JMAX


Description

The STP16NK65Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such STP16NK65Z series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Parameters:

Technical/Catalog Information	STP16NK65Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	500 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds	2750pF @ 25V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	89nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP16NK65Z STP16NK65Z 497 4119 5 ND 49741195ND 497-4119-5