STP16NS25

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-220
Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
  SWITH MODE POWER SUPPLIES (SMPS)
  DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
  IDEAL FOR MONITOR's B+ FUNCTION


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	250		V
VDGR	Drain- gate Voltage (RGS = 20 k)	250		V
VGS	Gate-Source Voltage	±20		V
ID	Drain Current (continuous) at Tc = 25	16	16(*)	A
ID	Drain Current (continuous) at Tc = 100	11	11(*)	A
IDM(`)	Drain Current (pulsed)	64	64 (*)	A
PTOT	Total Dissipation at Tc = 25	140	40	W
	Derating Factor	1	0.33	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5		V/ns
VISO	Insulation Withstand Voltage (DC)		2500	V
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area (1)ISD16A, di/dt300A/µs, V_DD(BR)DSS, Tj TJMAX
(*).Limited only by maximum temperature allowed


Description

Using the latest high voltage STP16NS25 MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.