MFG:TO220ABNONISOL;TO220ISOFULLPACKINLINE Package Cooled:7850 D/C:ST
MFG: TO220ABNONISOL;TO220ISOFULLPACKINLINE
Package Cooled: 7850
D/C: ST
Description: Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced...
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZFP |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
250 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
250 |
V | |
|
VGS |
Gate-Source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
16 |
16(*) |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
11 |
11(*) |
A |
|
IDM(`) |
Drain Current (pulsed) |
64 |
64 (*) |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
140 |
40 |
W |
|
Derating Factor |
1 |
0.33 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
5 |
V/ns | |
| VISO |
Insulation Withstand Voltage (DC) |
2500 |
V | |
|
Tstg |
Storage Temperature |
-65 to 175
|
| |
| Tj | Max. Operating Junction Temperature | |||
STP16NS25
PDF/DataSheet Download
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