STP17NK40Z

MOSFET N-Ch 400 Volt 15 Amp Zener SuperMESH

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SeekIC No. : 00159052 Detail

STP17NK40Z: MOSFET N-Ch 400 Volt 15 Amp Zener SuperMESH

floor Price/Ceiling Price

US $ .91~1.2 / Piece | Get Latest Price
Part Number:
STP17NK40Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~605
  • 605~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.2
  • $1.01
  • $.92
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.25 Ohms
Drain-Source Breakdown Voltage : 400 V


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
LIGHTING



Specifications

Symbol
Parameter
Value
Unit
STP10NK80Z
STP10NK80ZFP
VDS
Drain-source Voltage (VGS = 0)
400
V
VDGR
Drain- gate Voltage (RGS = 20 k)
400
V
VGS
Gate-Source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25
15
15 (*)
A
ID

Drain Current (continuous) at Tc = 100
9.4
9.4 (*)
A
IDM(`)
Drain Current (pulsed)
60
60 (*)
A
PTOT(1)
Total Dissipation at Tc = 25
150
35
W
Derating Factor
1.28
0.32
W/
IGS Gate-source Current (DC) ± 20 mA
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KW)
4500
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Viso Insulation Withstand Voltage (DC)   2500 V
Tstg
Tj
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150


(•)Pulse width limited by safe operating area (1)ISD15A, di/dt200A/µs, VDD(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

The STP17NK40Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTP17NK40Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs250 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs65nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP17NK40Z
STP17NK40Z



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