MFG:TO220ABNONISOL;TO220ISOFULLPACKINLINE Package Cooled:7850 D/C:ST
MFG: TO220ABNONISOL;TO220ISOFULLPACKINLINE
Package Cooled: 7850
D/C: ST
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZFP
|
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
400 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
400 |
V | |
|
VGS |
Gate-Source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
15 |
15 (*)
|
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
9.4 |
9.4 (*)
|
A |
|
IDM(`) |
Drain Current (pulsed) |
60 |
60 (*)
|
A |
|
PTOT(1) |
Total Dissipation at Tc = 25 |
150 |
35 |
W |
|
Derating Factor |
1.28 |
0.32 |
W/ | |
| IGS | Gate-source Current (DC) | ± 20 | mA | |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4500 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
| Viso | Insulation Withstand Voltage (DC) | 2500 | V | |
|
Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
STP17NK40Z
PDF/DataSheet Download
MOSFET N-CH 250V 17A TO-220
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Using the latest high voltage STP16NS25MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination struct...
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