MFG:ST Package Cooled:TO-220F
MFG: ST
Package Cooled: TO-220F
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | |
|
STP10NK80Z |
STP10NK80ZFP
|
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
400 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
400 |
V | |
|
VGS |
Gate-Source Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
15 |
15 (*)
|
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
9.4 |
9.4 (*)
|
A |
|
IDM(`) |
Drain Current (pulsed) |
60 |
60 (*)
|
A |
|
PTOT(1) |
Total Dissipation at Tc = 25 |
150 |
35 |
W |
|
Derating Factor |
1.28 |
0.32 |
W/ | |
| IGS | Gate-source Current (DC) | ± 20 | mA | |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4500 |
V | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
| Viso | Insulation Withstand Voltage (DC) | 2500 | V | |
|
Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| |
STP17NK40ZFP
PDF/DataSheet Download
The STP17NK40Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabil...
MOSFET N-CH 250V 17A TO-220
Using the latest high voltage STP16NS25FPMESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination stru...
Using the latest high voltage STP16NS25MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination struct...
MOSFET N-CH 500V 15A TO-220
The STP16NK65Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabil...
Price: 1.21-1.43 USD
5V voltage reference, 10Hz, +40V, 1.4mA, Low noise, 10μVPP, wide supply range
Price: 5-10 USD
precision 12-bit CMOS multiplying DAC, DIP, 0V to 7V, 670mW, fast interface timing
Price: 0.2-1 USD
1024-bit, 1-Wire EEPROM chip, TSOC6, 2.8V to 5.25V, Switchpoint Hysteresis
Price: 0.8-2 USD
DC-DC converter, 8-SOIC, -0.3 to 6 V
Price: 2-3 USD
High Electron Mobility Transistor, 3.5 V, 180 mW, Gold Gate Metallization
Price: 0.095-0.15 USD
power transistor, 50V, 3A, SOT-89, Low saturation voltage, Rohm
Price: 1-2 USD
AT25016-1, TQFP, ATMEL Corporation
Price: 0.8-0.85 USD
dual, 2-line to 4-line decoders/demultiplexer, SOP16, -0.5V to 7V, ±20mA, Low Power Consumption
Price: 50-70 USD
IGBT module, enhancement-mode, low saturation voltage, high speed, 3.5V
Price: 2-2.8 USD
CAP ALUM 3300UF 50V 20% SNAP
Price: 0.8-1 USD
TO247, Power MOSFET,Vdss 200 V, Rds 0.075ohm, Id 30A, 21 A VGS, 30 A IAR
Price: 30-50 USD
QM30TB-24, transistor module, 1200V, 30A, 310W, Mitsubishi Electric
